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Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252

RS stock no.:: 217-2535
Mfr. Part No.:: IPD95R450P7ATMA1
Manufacturer:: Infineon

Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252

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Bulk discount available

Subtotal (1 reel of 2500 units)*

R 47 565,00

(exc. VAT)

R 54 700,00

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 04 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 - 2500	R 19.026	R 47,565.00
5000 - 5000	R 18.551	R 46,377.50
7500 +	R 17.994	R 44,985.00

*price indicative

RS stock no.:: 217-2535
Mfr. Part No.:: IPD95R450P7ATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	950V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	104W
	Typical Gate Charge Qg @ Vgs	35nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.22 mm
	Length	6.73mm
	Height	2.41mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 950V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 104W
	Typical Gate Charge Qg @ Vgs 35nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.22 mm
	Length 6.73mm
	Height 2.41mm
	Automotive Standard AEC-Q101

Datasheet - IPD95R450P7ATMA1

The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and CossBest-in-class DPAK RDS(on) of 450 mΩ

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Infineon IPD Type N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252

FREE delivery for orders over R 1,500.00

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