Infineon CoolMOS N-Channel MOSFET, 9.9 A, 600 V P, 3-Pin TO-220 IPAN60R650CEXKSA1
- RS stock no.:
- 217-2497
- Mfr. Part No.:
- IPAN60R650CEXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 314,20
(exc. VAT)
R 361,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 960 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | R 15.71 | R 314.20 |
| 40 - 80 | R 15.317 | R 306.34 |
| 100 - 220 | R 14.858 | R 297.16 |
| 240 - 480 | R 14.263 | R 285.26 |
| 500 + | R 13.693 | R 273.86 |
*price indicative
- RS stock no.:
- 217-2497
- Mfr. Part No.:
- IPAN60R650CEXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 82W | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.87mm | |
| Length | 16.1mm | |
| Width | 4.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 82W | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 29.87mm | ||
Length 16.1mm | ||
Width 4.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Related links
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