Infineon CoolMOS Type N-Channel MOSFET, 8.4 A, 600 V N, 3-Pin TO-220 IPAN60R800CEXKSA1

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Subtotal (1 pack of 20 units)*

R 257,28

(exc. VAT)

R 295,88

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 20R 12.864R 257.28
40 - 80R 12.543R 250.86
100 - 220R 12.166R 243.32
240 - 480R 11.68R 233.60
500 +R 11.213R 224.26

*price indicative

Packaging Options:
RS stock no.:
217-2499
Mfr. Part No.:
IPAN60R800CEXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

82W

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

20.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

16.1mm

Height

29.87mm

Width

4.8 mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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