Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 8 A, 600 V P, 3-Pin TO-220 IPA60R170CFD7XKSA1
- RS stock no.:
- 214-4352
- Mfr. Part No.:
- IPA60R170CFD7XKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 221,82
(exc. VAT)
R 255,095
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 475 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 44.364 | R 221.82 |
| 10 - 95 | R 43.254 | R 216.27 |
| 100 - 245 | R 41.956 | R 209.78 |
| 250 - 495 | R 40.278 | R 201.39 |
| 500 + | R 38.666 | R 193.33 |
*price indicative
- RS stock no.:
- 214-4352
- Mfr. Part No.:
- IPA60R170CFD7XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS CFD7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 26W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.85mm | |
| Length | 10.68mm | |
| Standards/Approvals | No | |
| Width | 16.15 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS CFD7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 26W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.85mm | ||
Length 10.68mm | ||
Standards/Approvals No | ||
Width 16.15 mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS CFD7 has integrated fast body diode and comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition
It has high reliability for resonant topologies
It has best-in-class hard commutation ruggedness
Related links
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- Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET 600 V N, 3-Pin TO-220