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Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PDFN56 TSM650N15CR

RS stock no.:: 216-9716
Mfr. Part No.:: TSM650N15CR
Manufacturer:: Taiwan Semiconductor

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PDFN56 TSM650N15CR

Image representative of range

Bulk discount available

Subtotal (1 pack of 10 units)*

R 805,33

(exc. VAT)

R 926,13

(inc. VAT)

FREE delivery for orders over R 1,500.00

Being discontinued

Final 1,590 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
10 - 40	R 80.533	R 805.33
50 - 90	R 78.52	R 785.20
100 - 240	R 76.164	R 761.64
250 - 990	R 73.117	R 731.17
1000 +	R 70.192	R 701.92

*price indicative

RS stock no.:: 216-9716
Mfr. Part No.:: TSM650N15CR
Manufacturer:: Taiwan Semiconductor

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Taiwan Semiconductor
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PDFN56
	Series	TSM025
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	96W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Width	5.1 mm
	Standards/Approvals	RoHS 2011/65/EU and WEEE 2002/96/EC
	Height	1.1mm
	Length	6.1mm
	Automotive Standard	No

	Select all
	Brand Taiwan Semiconductor
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 150V
	Package Type PDFN56
	Series TSM025
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 96W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Width 5.1 mm
	Standards/Approvals RoHS 2011/65/EU and WEEE 2002/96/EC
	Height 1.1mm
	Length 6.1mm
	Automotive Standard No

Datasheet-TSM650N15CR

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PDFN56 TSM650N15CR

FREE delivery for orders over R 1,500.00

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