Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 161 A, 40 V Enhancement, 8-Pin PDFN56 TSM025NB04LCR
- RS stock no.:
- 216-9650
- Mfr. Part No.:
- TSM025NB04LCR
- Manufacturer:
- Taiwan Semiconductor
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 614,13
(exc. VAT)
R 706,25
(inc. VAT)
FREE delivery for orders over R 1,500.00
Being discontinued
- Final 6,660 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 61.413 | R 614.13 |
| 50 - 90 | R 59.878 | R 598.78 |
| 100 - 240 | R 58.082 | R 580.82 |
| 250 - 990 | R 55.759 | R 557.59 |
| 1000 + | R 53.529 | R 535.29 |
*price indicative
- RS stock no.:
- 216-9650
- Mfr. Part No.:
- TSM025NB04LCR
- Manufacturer:
- Taiwan Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 161A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 135W | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.81 mm | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 161A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 135W | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.81 mm | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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