Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 51 A, 40 V Enhancement, 8-Pin PDFN56
- RS stock no.:
- 216-9684
- Mfr. Part No.:
- TSM110NB04LCR
- Manufacturer:
- Taiwan Semiconductor
Image representative of range
Subtotal (1 reel of 2500 units)*
R 23 580,00
(exc. VAT)
R 27 117,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,500 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | R 9.432 | R 23,580.00 |
*price indicative
- RS stock no.:
- 216-9684
- Mfr. Part No.:
- TSM110NB04LCR
- Manufacturer:
- Taiwan Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Length | 6.2mm | |
| Standards/Approvals | RoHS/WEEE | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Length 6.2mm | ||
Standards/Approvals RoHS/WEEE | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Related links
- Taiwan Semi TSM025 Silicon MOSFET 40 V, 8-Pin PDFN56 TSM110NB04LCR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM130NB06LCR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM130NB06CR
- Taiwan Semi TSM025 Silicon MOSFET 40 V, 8-Pin PDFN56 TSM025NB04LCR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM048NB06LCR
- Taiwan Semi TSM025 Silicon MOSFET 150 V, 8-Pin PDFN56 TSM650N15CR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM300NB06DCR
- Taiwan Semi TSM025 Silicon MOSFET 40 V, 8-Pin PDFN56 TSM150NB04CR