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Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 121 A, 40 V Enhancement, 8-Pin PDFN56 TSM033NB04LCR

RS stock no.:: 216-9654
Mfr. Part No.:: TSM033NB04LCR
Manufacturer:: Taiwan Semiconductor

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 121 A, 40 V Enhancement, 8-Pin PDFN56 TSM033NB04LCR

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Bulk discount available

Subtotal (1 pack of 10 units)*

R 484,62

(exc. VAT)

R 557,31

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Pack*
10 - 40	R 48.462	R 484.62
50 - 90	R 47.25	R 472.50
100 - 240	R 45.832	R 458.32
250 - 990	R 43.999	R 439.99
1000 +	R 42.239	R 422.39

*price indicative

RS stock no.:: 216-9654
Mfr. Part No.:: TSM033NB04LCR
Manufacturer:: Taiwan Semiconductor

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Taiwan Semiconductor
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	121A
	Maximum Drain Source Voltage Vds	40V
	Series	TSM025
	Package Type	PDFN56
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	36W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	40nC
	Maximum Operating Temperature	150°C
	Length	6mm
	Standards/Approvals	WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21
	Height	1.05mm
	Width	3.81 mm
	Automotive Standard	No

	Select all
	Brand Taiwan Semiconductor
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 121A
	Maximum Drain Source Voltage Vds 40V
	Series TSM025
	Package Type PDFN56
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 36W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 40nC
	Maximum Operating Temperature 150°C
	Length 6mm
	Standards/Approvals WEEE 2002/96/EC, RoHS 2011/65/EU, IEC 61249-2-21
	Height 1.05mm
	Width 3.81 mm
	Automotive Standard No

Datasheet-TSM033NB04LCR

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 121 A, 40 V Enhancement, 8-Pin PDFN56 TSM033NB04LCR

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