ROHM Dual HP 2 Type N-Channel MOSFET, 80 A, 30 V Enhancement, 8-Pin HSOP HP8K24TB
- RS stock no.:
- 215-9752
- Mfr. Part No.:
- HP8K24TB
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 178,54
(exc. VAT)
R 205,32
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 23 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 17.854 | R 178.54 |
| 50 - 90 | R 17.408 | R 174.08 |
| 100 - 240 | R 16.886 | R 168.86 |
| 250 - 990 | R 16.211 | R 162.11 |
| 1000 + | R 15.563 | R 155.63 |
*price indicative
- RS stock no.:
- 215-9752
- Mfr. Part No.:
- HP8K24TB
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | HSOP | |
| Series | HP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Width | 6 mm | |
| Height | 1.1mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type HSOP | ||
Series HP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Width 6 mm | ||
Height 1.1mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Rohm power MOSFET having voltage rating of 30V. It has low on resistance. It is mainly used in switching and DC-DC converter.
Pb free
RoHS compliant
Related links
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