ROHM Nch+Nch HP8K 2 Type N-Channel MOSFET, 100 V Enhancement, 8-Pin HSOP-8 HP8KE7TB1
- RS stock no.:
- 264-873
- Mfr. Part No.:
- HP8KE7TB1
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 tape of 5 units)*
R 156,14
(exc. VAT)
R 179,56
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 100 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | R 31.228 | R 156.14 |
| 50 - 95 | R 30.448 | R 152.24 |
| 100 - 495 | R 29.534 | R 147.67 |
| 500 - 995 | R 28.352 | R 141.76 |
| 1000 + | R 27.218 | R 136.09 |
*price indicative
- RS stock no.:
- 264-873
- Mfr. Part No.:
- HP8KE7TB1
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HP8K | |
| Package Type | HSOP-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 19.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 19.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Nch+Nch | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HP8K | ||
Package Type HSOP-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 19.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 19.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Nch+Nch | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 24A. Designed in an HSOP8 package and offers low on-resistance.
Low on-resistance
Small Surface Mount Package (HSOP8)
Pb-free lead plating and RoHS compliant
Halogen Free
Related links
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