Infineon HEXFET N-Channel MOSFET, 42 A, 100 V Enhancement, 3-Pin TO-263 IRF1310NSTRLPBF
- RS stock no.:
- 215-2572
- Distrelec Article No.:
- 304-39-412
- Mfr. Part No.:
- IRF1310NSTRLPBF
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 177,45
(exc. VAT)
R 204,07
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 17.745 | R 177.45 |
| 20 - 90 | R 17.301 | R 173.01 |
| 100 - 240 | R 16.782 | R 167.82 |
| 250 - 490 | R 16.111 | R 161.11 |
| 500 + | R 15.467 | R 154.67 |
*price indicative
- RS stock no.:
- 215-2572
- Distrelec Article No.:
- 304-39-412
- Mfr. Part No.:
- IRF1310NSTRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | EIA 418 | |
| Width | 1.079in | |
| Height | 1.197in | |
| Length | 14.173in | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals EIA 418 | ||
Width 1.079in | ||
Height 1.197in | ||
Length 14.173in | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2pack is a surface mount power package capable of accommodating die sizes upto HEX-4. It provide the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2pack is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
Advanced Process Technology
Fully avalanche rated
Fast switching
Related links
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