Infineon CoolMOS C7 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 5-Pin VSON IPL65R130C7AUMA1
- RS stock no.:
- 214-9079
- Mfr. Part No.:
- IPL65R130C7AUMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 395,72
(exc. VAT)
R 455,08
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 79.144 | R 395.72 |
| 10 - 95 | R 77.166 | R 385.83 |
| 100 - 245 | R 74.852 | R 374.26 |
| 250 - 495 | R 71.858 | R 359.29 |
| 500 + | R 68.984 | R 344.92 |
*price indicative
- RS stock no.:
- 214-9079
- Mfr. Part No.:
- IPL65R130C7AUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 102W | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 102W | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Related links
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- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220