Infineon CoolMOS C7 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 5-Pin VSON
- RS stock no.:
- 214-9077
- Mfr. Part No.:
- IPL65R130C7AUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 86 541,00
(exc. VAT)
R 99 522,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 28.847 | R 86,541.00 |
| 6000 - 6000 | R 28.126 | R 84,378.00 |
| 9000 + | R 27.282 | R 81,846.00 |
*price indicative
- RS stock no.:
- 214-9077
- Mfr. Part No.:
- IPL65R130C7AUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | VSON | |
| Series | CoolMOS C7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 102W | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type VSON | ||
Series CoolMOS C7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 102W | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Height 1.1mm | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Related links
- Infineon CoolMOS™ C7 N-Channel MOSFET 650 V, 5-Pin ThinkPAK 8 x 8 IPL65R130C7AUMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode 650 V, 5-Pin ThinkPAK 8 x 8 IPL60R105P7AUMA1
- Infineon CoolMOS™ N-Channel MOSFET Transistor & Diode 650 V, 5-Pin ThinkPAK 8 x 8 IPL60R095CFD7AUMA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 650 V, 5-Pin ThinkPAK 8 x 8 IPL60R185C7AUMA1
- Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode 650 V, 5-Pin ThinkPAK 8 x 8 IPL60R065P7AUMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R104C7AUMA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R180P6AUMA1
- Infineon CoolMOS™ CFD7 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R160CFD7AUMA1