Infineon OptiMOS N-Channel MOSFET, 15 A, 75 V Enhancement, 6-Pin MG-WDSON BSF450NE7NH3XUMA1
- RS stock no.:
- 214-8982
- Mfr. Part No.:
- BSF450NE7NH3XUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 15 units)*
R 360,375
(exc. VAT)
R 414,435
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2,805 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 24.025 | R 360.38 |
| 30 - 75 | R 23.424 | R 351.36 |
| 90 - 225 | R 22.721 | R 340.82 |
| 240 - 465 | R 21.813 | R 327.20 |
| 480 + | R 20.94 | R 314.10 |
*price indicative
- RS stock no.:
- 214-8982
- Mfr. Part No.:
- BSF450NE7NH3XUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | OptiMOS | |
| Package Type | MG-WDSON | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Width | 6.35mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series OptiMOS | ||
Package Type MG-WDSON | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Width 6.35mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon range of 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. It requires Smallest board-space consumption. World’s lowest R DS(on), with Increased efficiency and it is Environmental friendly.
Low parasitic inductance
100% avalanche tested
It consists of Dual sided cooling
Related links
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 6-Pin MG-WDSON
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 7-Pin MG-WDSON
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1
- Infineon Isolated OptiMOS 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1
- Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SC-88