Infineon OptiMOS Type N-Channel MOSFET, 15 A, 75 V Enhancement, 6-Pin MG-WDSON BSF450NE7NH3XUMA1
- RS stock no.:
- 214-8982
- Mfr. Part No.:
- BSF450NE7NH3XUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 15 units)*
R 378,03
(exc. VAT)
R 434,73
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,245 unit(s) shipping from 21 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 25.202 | R 378.03 |
| 30 - 75 | R 24.572 | R 368.58 |
| 90 - 225 | R 23.835 | R 357.53 |
| 240 - 465 | R 22.881 | R 343.22 |
| 480 + | R 21.966 | R 329.49 |
*price indicative
- RS stock no.:
- 214-8982
- Mfr. Part No.:
- BSF450NE7NH3XUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | MG-WDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type MG-WDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range of 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. It requires Smallest board-space consumption. World’s lowest R DS(on), with Increased efficiency and it is Environmental friendly.
Low parasitic inductance
100% avalanche tested
It consists of Dual sided cooling
Related links
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 6-Pin MG-WDSON
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 7-Pin MG-WDSON
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 BSD214SNH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin IPB65R660CFDAATMA1
- Infineon Isolated OptiMOS 2 Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-88 2N7002DWH6327XTSA1