Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin TDSON BSC0502NSIATMA1
- RS stock no.:
- 214-8975
- Mfr. Part No.:
- BSC0502NSIATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 15 units)*
R 203,865
(exc. VAT)
R 234,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 14,985 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | R 13.591 | R 203.87 |
| 30 - 75 | R 13.251 | R 198.77 |
| 90 - 225 | R 12.854 | R 192.81 |
| 240 - 465 | R 12.34 | R 185.10 |
| 480 + | R 11.847 | R 177.71 |
*price indicative
- RS stock no.:
- 214-8975
- Mfr. Part No.:
- BSC0502NSIATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS 5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | 0.65V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS 5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf 0.65V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Length 5.49mm | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
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