onsemi NTMTS Type N-Channel MOSFET, 267 A, 100 V Enhancement, 8-Pin TDFN NTMTSC1D6N10MCTXG
- RS stock no.:
- 214-8907
- Mfr. Part No.:
- NTMTSC1D6N10MCTXG
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 661,58
(exc. VAT)
R 760,815
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,265 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 132.316 | R 661.58 |
| 10 - 95 | R 129.008 | R 645.04 |
| 100 - 245 | R 125.138 | R 625.69 |
| 250 - 495 | R 120.132 | R 600.66 |
| 500 + | R 115.326 | R 576.63 |
*price indicative
- RS stock no.:
- 214-8907
- Mfr. Part No.:
- NTMTSC1D6N10MCTXG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTMTS | |
| Package Type | TDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.9W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.4mm | |
| Height | 1.02mm | |
| Width | 8.5 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTMTS | ||
Package Type TDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.9W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 8.4mm | ||
Height 1.02mm | ||
Width 8.5 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
The ON Semiconductor NTMFS series is n-channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion.
Pb−Free
RoHS compliant
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