onsemi NTBGS1D Type N-Channel MOSFET, 267 A, 60 V Enhancement, 7-Pin TO-263 NTBGS1D5N06C
- RS stock no.:
- 221-6700
- Mfr. Part No.:
- NTBGS1D5N06C
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 445,48
(exc. VAT)
R 512,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 800 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 89.096 | R 445.48 |
| 10 - 95 | R 86.868 | R 434.34 |
| 100 - 245 | R 84.262 | R 421.31 |
| 250 - 495 | R 80.892 | R 404.46 |
| 500 + | R 77.656 | R 388.28 |
*price indicative
- RS stock no.:
- 221-6700
- Mfr. Part No.:
- NTBGS1D5N06C
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 267A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTBGS1D | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.55mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 211W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10.2mm | |
| Height | 15.7mm | |
| Width | 4.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 267A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTBGS1D | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.55mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 211W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10.2mm | ||
Height 15.7mm | ||
Width 4.7 mm | ||
Automotive Standard No | ||
The ON Semiconductor 60V of power MOSFET used 267A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
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