Nexperia PSM Type N-Channel MOSFET, 267 A, 100 V Enhancement, 5-Pin LFPAK PSMN2R0-100SSFJ

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Subtotal (1 tape of 1 unit)*

R 127,06

(exc. VAT)

R 146,12

(inc. VAT)

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1 - 9R 127.06
10 - 99R 123.88
100 - 499R 120.16
500 - 999R 115.35
1000 +R 110.74

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Packaging Options:
RS stock no.:
219-461
Mfr. Part No.:
PSMN2R0-100SSFJ
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

267A

Maximum Drain Source Voltage Vds

100V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.07mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

161nC

Maximum Power Dissipation Pd

341W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

175°C

Width

8 mm

Standards/Approvals

RoHS

Height

1.6mm

Length

8mm

Automotive Standard

No

COO (Country of Origin):
MY
The Nexperia N-Channel MOSFET is qualified for operation up to 175°C and is ideal for industrial and consumer applications. Key applications include synchronous rectification in AC-DC and DC-DC converters, primary side switching, BLDC motor control, full-bridge and half-bridge circuits, and battery protection.

Strong avalanche energy rating

Avalanche rated and 100% tested

Ha free and RoHS compliant

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