Infineon CoolMOS Type N-Channel MOSFET, 6 A, 800 V, 3-Pin TO-252 SPD06N80C3ATMA1
- RS stock no.:
- 214-4481
- Distrelec Article No.:
- 304-39-429
- Mfr. Part No.:
- SPD06N80C3ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 190,99
(exc. VAT)
R 219,64
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,980 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 19.099 | R 190.99 |
| 20 - 90 | R 18.622 | R 186.22 |
| 100 - 240 | R 18.063 | R 180.63 |
| 250 - 490 | R 17.34 | R 173.40 |
| 500 + | R 16.646 | R 166.46 |
*price indicative
- RS stock no.:
- 214-4481
- Distrelec Article No.:
- 304-39-429
- Mfr. Part No.:
- SPD06N80C3ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Cool MOS MOSFET uses new revolutionary high voltage technology and has high peak current capability.
Ultra low effective capacitances
Related links
- Infineon CoolMOS Type N-Channel MOSFET 800 V, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 SPD02N80C3ATMA1
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Infineon 800V CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R900P7ATMA1
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPP80R1K4P7XKSA1