Infineon CoolMOS Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin SOT-223

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Bulk discount available

Subtotal (1 reel of 3000 units)*

R 12 348,00

(exc. VAT)

R 14 199,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000R 4.116R 12,348.00
6000 - 6000R 4.013R 12,039.00
9000 +R 3.893R 11,679.00

*price indicative

RS stock no.:
222-4688
Mfr. Part No.:
IPN80R2K4P7ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.3W

Typical Gate Charge Qg @ Vgs

7.5nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3.7 mm

Standards/Approvals

No

Length

6.7mm

Height

1.8mm

Automotive Standard

No

The Infineon design of Cool MOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

Product validation acc. JEDEC Standard

Low switching losses (Eoss) Integrated ESD protection diode

Excellent thermal behaviour

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