Infineon CoolMOS Type N-Channel MOSFET, 2 A, 800 V Enhancement, 3-Pin TO-252 SPD02N80C3ATMA1

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Subtotal (1 pack of 15 units)*

R 197,76

(exc. VAT)

R 227,43

(inc. VAT)

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  • 2,355 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
15 - 15R 13.184R 197.76
30 - 75R 12.855R 192.83
90 - 225R 12.469R 187.04
240 - 465R 11.971R 179.57
480 +R 11.492R 172.38

*price indicative

Packaging Options:
RS stock no.:
214-4479
Mfr. Part No.:
SPD02N80C3ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.7Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

16nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

42W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC1

Distrelec Product Id

304-39-428

Automotive Standard

No

This Infineon Cool MOS MOSFET uses new revolutionary high voltage technology and has high peak current capability.

It has ultra low gate charge

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