Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2
- RS stock no.:
- 214-4476
- Distrelec Article No.:
- 304-39-427
- Mfr. Part No.:
- SN7002NH6327XTSA2
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 200 units)*
R 294,80
(exc. VAT)
R 339,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,200 unit(s) shipping from 29 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 200 | R 1.474 | R 294.80 |
| 400 - 400 | R 1.437 | R 287.40 |
| 600 - 600 | R 1.394 | R 278.80 |
| 800 - 800 | R 1.338 | R 267.60 |
| 1000 + | R 1.285 | R 257.00 |
*price indicative
- RS stock no.:
- 214-4476
- Distrelec Article No.:
- 304-39-427
- Mfr. Part No.:
- SN7002NH6327XTSA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Power Dissipation Pd | 0.36W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, AEC Q101 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Power Dissipation Pd 0.36W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, AEC Q101 | ||
Automotive Standard No | ||
This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.
It is Halogen-free according to IEC61249-2-21
Related links
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