Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23

Image representative of range

Bulk discount available

Subtotal (1 reel of 3000 units)*

R 3 294,00

(exc. VAT)

R 3 789,00

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 72,000 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
3000 - 3000R 1.098R 3,294.00
6000 - 6000R 1.07R 3,210.00
9000 +R 1.038R 3,114.00

*price indicative

RS stock no.:
214-4336
Mfr. Part No.:
BSS7728NH6327XTSA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.36W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Standards/Approvals

No

Width

1.4 mm

Length

3.04mm

Automotive Standard

AEC-Q101

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

Related links