Infineon HEXFET Type N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263 IRF2807STRLPBF
- RS stock no.:
- 214-4444
- Distrelec Article No.:
- 304-39-413
- Mfr. Part No.:
- IRF2807STRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 275,54
(exc. VAT)
R 316,87
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,390 unit(s) shipping from 13 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 27.554 | R 275.54 |
| 20 - 90 | R 26.865 | R 268.65 |
| 100 - 240 | R 26.059 | R 260.59 |
| 250 - 490 | R 25.017 | R 250.17 |
| 500 + | R 24.016 | R 240.16 |
*price indicative
- RS stock no.:
- 214-4444
- Distrelec Article No.:
- 304-39-413
- Mfr. Part No.:
- IRF2807STRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device
It is fully avalanche rated
Related links
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