Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2
- RS stock no.:
- 214-4337
- Mfr. Part No.:
- BSS7728NH6327XTSA2
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 200 units)*
R 318,20
(exc. VAT)
R 366,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 74,600 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 200 | R 1.591 | R 318.20 |
| 400 - 400 | R 1.551 | R 310.20 |
| 600 - 600 | R 1.504 | R 300.80 |
| 800 - 800 | R 1.444 | R 288.80 |
| 1000 + | R 1.386 | R 277.20 |
*price indicative
- RS stock no.:
- 214-4337
- Mfr. Part No.:
- BSS7728NH6327XTSA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.
It is Halogen-free according to IEC61249-2-21
Related links
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Nexperia BSS138AKA Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138AKAR
- Infineon SN7002I Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SN7002IXTSA1
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 ZVN4106FTA
- Nexperia BSS138AKA Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SN7002I Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23