Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2

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Subtotal (1 pack of 200 units)*

R 333,60

(exc. VAT)

R 383,60

(inc. VAT)

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Units
Per unit
Per Pack*
200 - 200R 1.668R 333.60
400 - 400R 1.626R 325.20
600 - 600R 1.577R 315.40
800 - 800R 1.514R 302.80
1000 +R 1.454R 290.80

*price indicative

Packaging Options:
RS stock no.:
214-4337
Mfr. Part No.:
BSS7728NH6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.36W

Typical Gate Charge Qg @ Vgs

1nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

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