Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP
- RS stock no.:
- 214-4334
- Mfr. Part No.:
- BSL308CH6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 3000 units)*
R 10 365,00
(exc. VAT)
R 11 919,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 9,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 3.455 | R 10,365.00 |
| 6000 - 6000 | R 3.369 | R 10,107.00 |
| 9000 + | R 3.267 | R 9,801.00 |
*price indicative
- RS stock no.:
- 214-4334
- Mfr. Part No.:
- BSL308CH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 0.6W | |
| Forward Voltage Vf | 1.1V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.6 mm | |
| Length | 2.9mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Height | 1mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P, Type N | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 0.6W | ||
Forward Voltage Vf 1.1V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 1.6 mm | ||
Length 2.9mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Height 1mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
This Infineon OptimOS P3 + OptiMOS 2 MOSFET- an n-channel and a p-channel power MOSFET within the same package-is high efficiency solution for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). It is Avalanche rated
It is 100% lead-free and RoHS compliant
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