Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

RS stock no.:: 110-7129
Mfr. Part No.:: BSL316CH6327XTSA1
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

Image representative of range

Bulk discount available

Subtotal (1 pack of 60 units)**

R 331 74

(exc. VAT)

R 381 48

(inc. VAT)

31260 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
60 - 60	R 5,529	R 331,74
120 - 540	R 5,39	R 323,40
600 - 1140	R 5,229	R 313,74
1200 - 2940	R 5,02	R 301,20
3000 +	R 4,819	R 289,14

**price indicative

RS stock no.:: 110-7129
Mfr. Part No.:: BSL316CH6327XTSA1
Manufacturer:: Infineon

BSL316C OptiMOS Dual Small Signal MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.4 A, 1.5 A
Maximum Drain Source Voltage	30 V
Package Type	TSOP-6
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	270 mΩ, 280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	1.6mm
Typical Gate Charge @ Vgs	0.6 nC @ 5 V, 2.4 nC @ 5 V
Length	2.9mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.1V
Height	1mm

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

FREE delivery for orders over R 1500

Infineon OptiMOS™ Dual Power MOSFET

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