Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

RS stock no.:: 110-7129
Mfr. Part No.:: BSL316CH6327XTSA1
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 60)

R 7,482

(exc. VAT)

R 8,604

(inc. VAT)

31380 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
60 - 60	R 7,482	R 448,92
120 - 540	R 7,295	R 437,70
600 - 1140	R 7,076	R 424,56
1200 - 2940	R 6,793	R 407,58
3000 +	R 6,521	R 391,26

**price indicative

RS stock no.:: 110-7129
Mfr. Part No.:: BSL316CH6327XTSA1
Manufacturer:: Infineon

BSL316C OptiMOS Dual Small Signal MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.4 A, 1.5 A
Maximum Drain Source Voltage	30 V
Package Type	TSOP-6
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	270 mΩ, 280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Length	2.9mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	0.6 nC @ 5 V, 2.4 nC @ 5 V
Width	1.6mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C
Height	1mm

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

Infineon OptiMOS™ Dual Power MOSFET

Related links