Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1
- RS stock no.:
- 110-7129
- Distrelec Article No.:
- 304-36-975
- Mfr. Part No.:
- BSL316CH6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 60 units)*
R 277,62
(exc. VAT)
R 319,26
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 30,960 left, ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 60 - 60 | R 4.627 | R 277.62 |
| 120 - 540 | R 4.511 | R 270.66 |
| 600 - 1140 | R 4.376 | R 262.56 |
| 1200 - 2940 | R 4.201 | R 252.06 |
| 3000 + | R 4.033 | R 241.98 |
*price indicative
- RS stock no.:
- 110-7129
- Distrelec Article No.:
- 304-36-975
- Mfr. Part No.:
- BSL316CH6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP-6 | |
| Series | OptiMOS™ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Forward Voltage Vf | 0.86V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.6 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP-6 | ||
Series OptiMOS™ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Forward Voltage Vf 0.86V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Width 1.6 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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