Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

RS stock no.:: 110-7129
Mfr. Part No.:: BSL316CH6327XTSA1
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

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Bulk discount available

Price (Excl VAT) Each (In a Pack of 60)

R 5,571

(exc. VAT)

R 6,407

(inc. VAT)

31260 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

3000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over R 1500

Not Available for premium delivery

Units	Per unit	Per Pack**
60 - 60	R 5,571	R 334,26
120 - 540	R 5,432	R 325,92
600 - 1140	R 5,269	R 316,14
1200 - 2940	R 5,058	R 303,48
3000 +	R 4,856	R 291,36

**price indicative

RS stock no.:: 110-7129
Mfr. Part No.:: BSL316CH6327XTSA1
Manufacturer:: Infineon

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.4 A, 1.5 A
Maximum Drain Source Voltage	30 V
Package Type	TSOP-6
Series	OptiMOS™
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	270 mΩ, 280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	0.6 nC @ 5 V, 2.4 nC @ 5 V
Length	2.9mm
Transistor Material	Si
Width	1.6mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Height	1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.1V

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

FREE delivery for orders over R 1500

Infineon OptiMOS™ Dual Power MOSFET

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