DiodesZetex DMNH6009SPS Type N-Channel MOSFET, 95 A, 60 V Enhancement, 8-Pin PowerDI5060 DMNH6009SPS-13
- RS stock no.:
- 213-9197
- Mfr. Part No.:
- DMNH6009SPS-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 100,28
(exc. VAT)
R 115,32
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,470 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 10.028 | R 100.28 |
| 50 - 90 | R 9.777 | R 97.77 |
| 100 - 240 | R 9.484 | R 94.84 |
| 250 - 990 | R 9.105 | R 91.05 |
| 1000 + | R 8.741 | R 87.41 |
*price indicative
- RS stock no.:
- 213-9197
- Mfr. Part No.:
- DMNH6009SPS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Series | DMNH6009SPS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37.3nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 6.15 mm | |
| Length | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Series DMNH6009SPS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37.3nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 6.15 mm | ||
Length 5.15mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMNH6009SPS series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
100% Unclamped inductive switch test in production
Low RDS – minimizes power losses
Low Qg – minimizes switching losses
Related links
- DiodesZetex DMNH6009SPS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex DMTH61M8SPS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060-8
- DiodesZetex Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerDI5060-8
- DiodesZetex Type N-Channel MOSFET 8-Pin PowerDI5060-8
- DiodesZetex DMTH61M8SPSQ Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerDI5060
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI5060-8
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerDI5060-8