DiodesZetex DMNH6009SPS Type N-Channel MOSFET, 95 A, 60 V Enhancement, 8-Pin PowerDI5060
- RS stock no.:
- 213-9196
- Mfr. Part No.:
- DMNH6009SPS-13
- Manufacturer:
- DiodesZetex
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 213-9196
- Mfr. Part No.:
- DMNH6009SPS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060 | |
| Series | DMNH6009SPS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37.3nC | |
| Maximum Power Dissipation Pd | 3.3W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.15mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 6.15 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060 | ||
Series DMNH6009SPS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37.3nC | ||
Maximum Power Dissipation Pd 3.3W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 5.15mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 6.15 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMNH6009SPS series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
100% Unclamped inductive switch test in production
Low RDS – minimizes power losses
Low Qg – minimizes switching losses
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