STMicroelectronics SCTL35N65G2V Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin PowerFLAT
- RS stock no.:
- 213-3941
- Mfr. Part No.:
- SCTL35N65G2V
- Manufacturer:
- STMicroelectronics
Image representative of range
Subtotal (1 reel of 3000 units)*
R 782 280,00
(exc. VAT)
R 899 610,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 30 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 260.76 | R 782,280.00 |
*price indicative
- RS stock no.:
- 213-3941
- Mfr. Part No.:
- SCTL35N65G2V
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerFLAT | |
| Series | SCTL35N65G2V | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 417W | |
| Forward Voltage Vf | 3.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 8.1 mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerFLAT | ||
Series SCTL35N65G2V | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 417W | ||
Forward Voltage Vf 3.3V | ||
Maximum Operating Temperature 175°C | ||
Width 8.1 mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Height 0.95mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Source sensing pin for increased efficiency
Related links
- STMicroelectronics SCTL35N65G2V SiC N-Channel MOSFET 650 V, 5-Pin PowerFLAT 8 x 8 HV SCTL35N65G2V
- STMicroelectronics M6 N-Channel MOSFET 600 V, 5-Pin PowerFLAT 8 x 8 HV STL19N60M6
- STMicroelectronics N-Channel MOSFET Transistor 600 V, 5-Pin PowerFLAT 8 x 8 HV STL45N60DM6
- STMicroelectronics N-Channel MOSFET Transistor 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6
- STMicroelectronics MDmesh M5 N-Channel MOSFET 710 V, 5-Pin PowerFLAT 8 x 8 HV STL57N65M5
- STMicroelectronics MDmesh M5 N-Channel MOSFET 600 V, 5-Pin PowerFLAT 8 x 8 HV STL36N55M5
- STMicroelectronics ST8L65 Silicon N-Channel MOSFET 650 V, 5-Pin PowerFLAT ST8L65N044M9
- STMicroelectronics STL N-Channel MOSFET 100 V, 8-Pin PowerFLAT 5x6 STL165N10F8AG