Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTH4LN067N
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	266W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	22.74mm
	Standards/Approvals	RoHS
	Width	5.2 mm
	Length	15.8mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTH4LN067N
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 266W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 22.74mm
	Standards/Approvals RoHS
	Width 5.2 mm
	Length 15.8mm
	Automotive Standard No

Datasheet - NTH4LN067N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 691 pF

100% avalanche tested

onsemi NTH4LN067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin TO-247

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