Vishay SiR826LDP Type N-Channel MOSFET, 86 A, 80 V Enhancement, 8-Pin SO-8

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Bulk discount available

Subtotal (1 reel of 3000 units)*

R 29 514,00

(exc. VAT)

R 33 942,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000R 9.838R 29,514.00
6000 +R 9.592R 28,776.00

*price indicative

RS stock no.:
210-5004
Mfr. Part No.:
SiR826LDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

80V

Series

SiR826LDP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.15mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

90nC

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Width

5.26 mm

Length

6.25mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has PowerPAK SO-8 package type with 86 A drain current.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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