Vishay E Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-GE3

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Subtotal (1 pack of 5 units)*

R 330,13

(exc. VAT)

R 379,65

(inc. VAT)

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Last RS stock
  • Final 2,770 unit(s), ready to ship from another location

Units
Per unit
Per Pack*
5 - 5R 66.026R 330.13
10 - 95R 64.376R 321.88
100 - 245R 62.444R 312.22
250 - 495R 59.946R 299.73
500 +R 57.548R 287.74

*price indicative

Packaging Options:
RS stock no.:
210-4977
Mfr. Part No.:
SIHB21N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

14.61mm

Height

4.06mm

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with 17.4 A drain current.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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