Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263

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Subtotal (1 tube of 50 units)*

R 1 910,60

(exc. VAT)

R 2 197,20

(inc. VAT)

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Last RS stock
  • Final 900 unit(s), ready to ship from another location

Units
Per unit
Per Tube*
50 - 50R 38.212R 1,910.60
100 - 450R 37.257R 1,862.85
500 - 950R 36.139R 1,806.95
1000 +R 34.693R 1,734.65

*price indicative

RS stock no.:
228-2846
Mfr. Part No.:
SIHB24N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

208W

Typical Gate Charge Qg @ Vgs

59nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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