DiodesZetex DMTH10 N-Channel MOSFET, 20.1 kA, 100 V Enhancement, 8-Pin PowerDI5060 DMTH10H4M5LPS-13
- RS stock no.:
- 206-0159
- Mfr. Part No.:
- DMTH10H4M5LPS-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 117,13
(exc. VAT)
R 134,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,870 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 23.426 | R 117.13 |
| 50 - 95 | R 22.84 | R 114.20 |
| 100 - 245 | R 22.154 | R 110.77 |
| 250 - 995 | R 21.268 | R 106.34 |
| 1000 + | R 20.418 | R 102.09 |
*price indicative
- RS stock no.:
- 206-0159
- Mfr. Part No.:
- DMTH10H4M5LPS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20.1kA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMTH10 | |
| Package Type | PowerDI5060 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2.7W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20.1kA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMTH10 | ||
Package Type PowerDI5060 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2.7W | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 100V,8 pin N-channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, this device is ideal for use in notebook battery power management and load switch. Its gate-source voltage is 20V with 2.7 W thermal power dissipation.
Low on-resistance
Fast switching speed
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