DiodesZetex DMP1009 Type P-Channel MOSFET, 15 A, 12 V Enhancement, 6-Pin UDFN DMP1009UFDFQ-7
- RS stock no.:
- 206-0107
- Mfr. Part No.:
- DMP1009UFDFQ-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 184,20
(exc. VAT)
R 211,825
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 6,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.368 | R 184.20 |
| 50 - 75 | R 7.184 | R 179.60 |
| 100 - 225 | R 6.968 | R 174.20 |
| 250 - 975 | R 6.69 | R 167.25 |
| 1000 + | R 6.422 | R 160.55 |
*price indicative
- RS stock no.:
- 206-0107
- Mfr. Part No.:
- DMP1009UFDFQ-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMP1009 | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 0.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.95 mm | |
| Length | 1.95mm | |
| Height | 0.57mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMP1009 | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 0.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.95 mm | ||
Length 1.95mm | ||
Height 0.57mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 12V N channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in DC-DC converter and battery management application.
Low on-resistance
Low input capacitance
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