DiodesZetex DMP Type P-Channel MOSFET, 6 A, 40 V Enhancement, 6-Pin UDFN DMP4047LFDE-7
- RS stock no.:
- 770-5291
- Mfr. Part No.:
- DMP4047LFDE-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 tape of 10 units)*
R 75,69
(exc. VAT)
R 87,04
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,650 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 40 | R 7.569 | R 75.69 |
| 50 - 240 | R 7.38 | R 73.80 |
| 250 - 990 | R 7.159 | R 71.59 |
| 1000 - 2990 | R 6.873 | R 68.73 |
| 3000 + | R 6.598 | R 65.98 |
*price indicative
- RS stock no.:
- 770-5291
- Mfr. Part No.:
- DMP4047LFDE-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | DMP | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23.2nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.05 mm | |
| Standards/Approvals | No | |
| Height | 0.58mm | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series DMP | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23.2nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 2.05 mm | ||
Standards/Approvals No | ||
Height 0.58mm | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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