DiodesZetex DMN6022 Type N-Channel MOSFET, 6.9 A, 60 V Enhancement, 8-Pin SO-8 DMN6022SSS-13
- RS stock no.:
- 206-0091
- Mfr. Part No.:
- DMN6022SSS-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 25 units)*
R 191,55
(exc. VAT)
R 220,275
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,675 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.662 | R 191.55 |
| 50 - 75 | R 7.471 | R 186.78 |
| 100 - 225 | R 7.247 | R 181.18 |
| 250 - 975 | R 6.957 | R 173.93 |
| 1000 + | R 6.678 | R 166.95 |
*price indicative
- RS stock no.:
- 206-0091
- Mfr. Part No.:
- DMN6022SSS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN6022 | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.4mm | |
| Length | 4.85mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN6022 | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.4mm | ||
Length 4.85mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 1.3 W thermal power dissipation.
Low on-resistance
Low input capacitance
Related links
- DiodesZetex DMN6022 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 IRF7473TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS4935BZ
- DiodesZetex Type N-Channel MOSFET 8-Pin PowerDI5060-8
- DiodesZetex Dual 2 Type N-Channel MOSFET 8-Pin PowerDI5060-8
- DiodesZetex Type N-Channel MOSFET 8-Pin PowerDI5060-8 DMT6011LPDW-13