DiodesZetex DMN6022 Type N-Channel MOSFET, 6.9 A, 60 V Enhancement, 8-Pin SO-8
- RS stock no.:
- 206-0090
- Mfr. Part No.:
- DMN6022SSS-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 reel of 2500 units)*
R 11 652,50
(exc. VAT)
R 13 400,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 21 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 7500 | R 4.661 | R 11,652.50 |
| 10000 - 22500 | R 4.544 | R 11,360.00 |
| 25000 + | R 4.408 | R 11,020.00 |
*price indicative
- RS stock no.:
- 206-0090
- Mfr. Part No.:
- DMN6022SSS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | DMN6022 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.85mm | |
| Standards/Approvals | No | |
| Width | 3.8 mm | |
| Height | 1.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series DMN6022 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.3W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 4.85mm | ||
Standards/Approvals No | ||
Width 3.8 mm | ||
Height 1.4mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 60V N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 1.3 W thermal power dissipation.
Low on-resistance
Low input capacitance
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