DiodesZetex DMN10 Type N-Channel MOSFET, 3.7 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H170SFGQ-7
- RS stock no.:
- 206-0073
- Mfr. Part No.:
- DMN10H170SFGQ-7
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 216,15
(exc. VAT)
R 248,575
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,275 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 8.646 | R 216.15 |
| 50 - 75 | R 8.43 | R 210.75 |
| 100 - 225 | R 8.177 | R 204.43 |
| 250 - 975 | R 7.85 | R 196.25 |
| 1000 + | R 7.536 | R 188.40 |
*price indicative
- RS stock no.:
- 206-0073
- Mfr. Part No.:
- DMN10H170SFGQ-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMN10 | |
| Package Type | PowerDI3333 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 133mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 26.7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Width | 3.25 mm | |
| Length | 3.25mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMN10 | ||
Package Type PowerDI3333 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 133mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 26.7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Width 3.25 mm | ||
Length 3.25mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 100V complementary pair enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management function.
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package
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