Vishay SiDR680ADP Type N-Channel MOSFET, 137 A, 80 V Enhancement, 8-Pin SO-8 SIDR680ADP-T1-RE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

R 427,17

(exc. VAT)

R 491,25

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 08 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 90R 42.717R 427.17
100 - 490R 41.649R 416.49
500 - 990R 40.40R 404.00
1000 - 1490R 38.784R 387.84
1500 +R 37.233R 372.33

*price indicative

Packaging Options:
RS stock no.:
204-7258
Mfr. Part No.:
SIDR680ADP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiDR680ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.88mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

55nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.9mm

Height

0.51mm

Width

4.9 mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low RDS - Qg figure-of-merit (FOM) and is tuned for the lowest RDS - Qoss FOM.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

Related links