Vishay SiDR680ADP Type N-Channel MOSFET, 137 A, 80 V Enhancement, 8-Pin SO-8 SIDR680ADP-T1-RE3
- RS stock no.:
- 204-7258
- Mfr. Part No.:
- SIDR680ADP-T1-RE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 415,83
(exc. VAT)
R 478,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 22 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 41.583 | R 415.83 |
| 100 - 490 | R 40.543 | R 405.43 |
| 500 - 990 | R 39.327 | R 393.27 |
| 1000 - 1490 | R 37.754 | R 377.54 |
| 1500 + | R 36.244 | R 362.44 |
*price indicative
- RS stock no.:
- 204-7258
- Mfr. Part No.:
- SIDR680ADP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | SiDR680ADP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.88mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.9mm | |
| Width | 4.9 mm | |
| Height | 0.51mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series SiDR680ADP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.88mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5.9mm | ||
Width 4.9 mm | ||
Height 0.51mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 80 V (D-S) MOSFET has a very low RDS - Qg figure-of-merit (FOM) and is tuned for the lowest RDS - Qoss FOM.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
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- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8