Vishay SiHA105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-220 SIHA105N60EF-GE3
- RS stock no.:
- 204-7202
- Mfr. Part No.:
- SIHA105N60EF-GE3
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 418,35
(exc. VAT)
R 481,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 10 November 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 83.67 | R 418.35 |
| 50 - 95 | R 81.578 | R 407.89 |
| 100 - 245 | R 79.13 | R 395.65 |
| 250 - 495 | R 75.964 | R 379.82 |
| 500 + | R 72.926 | R 364.63 |
*price indicative
- RS stock no.:
- 204-7202
- Mfr. Part No.:
- SIHA105N60EF-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | SiHA105N60EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 102mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 13.8mm | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series SiHA105N60EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 102mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Operating Temperature 150°C | ||
Height 13.8mm | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
Related links
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