STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247
- RS stock no.:
- 204-3957
- Mfr. Part No.:
- SCTWA35N65G2V
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 7 037,58
(exc. VAT)
R 8 093,22
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 60 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 234.586 | R 7,037.58 |
| 120 - 240 | R 228.721 | R 6,861.63 |
| 270 - 480 | R 221.859 | R 6,655.77 |
| 510 - 990 | R 212.985 | R 6,389.55 |
| 1020 + | R 204.466 | R 6,133.98 |
*price indicative
- RS stock no.:
- 204-3957
- Mfr. Part No.:
- SCTWA35N65G2V
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTWA35N65G2V | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.072Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 240W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.3V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Height | 41.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTWA35N65G2V | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.072Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 240W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.3V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Height 41.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.
Low capacitance
Very fast and robust intrinsic body diode
Very tight variation of on-resistance vs. temperature
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