onsemi N-Channel NTTF 1 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 12-Pin WQFN NTTFD4D0N04HLTWG
- RS stock no.:
- 202-5718
- Mfr. Part No.:
- NTTFD4D0N04HLTWG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 518,075
(exc. VAT)
R 595,775
(inc. VAT)
Add 75 units to get free delivery
Last RS stock
- Final 8,975 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | R 20.723 | R 518.08 |
| 100 - 475 | R 20.205 | R 505.13 |
| 500 - 1475 | R 19.599 | R 489.98 |
| 1500 + | R 18.815 | R 470.38 |
*price indicative
- RS stock no.:
- 202-5718
- Mfr. Part No.:
- NTTFD4D0N04HLTWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTTF | |
| Package Type | WQFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.78V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 26W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Transistor Configuration | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 0.75mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTTF | ||
Package Type WQFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.78V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 26W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Transistor Configuration N-Channel | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Standards/Approvals RoHS Compliant | ||
Height 0.75mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
Related links
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