onsemi NTH Type N-Channel MOSFET, 17.3 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L160N120SC1
- RS stock no.:
- 202-5703
- Mfr. Part No.:
- NTH4L160N120SC1
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 136,48
(exc. VAT)
R 156,96
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 430 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 68.24 | R 136.48 |
| 50 - 98 | R 66.535 | R 133.07 |
| 100 - 198 | R 64.54 | R 129.08 |
| 200 + | R 61.96 | R 123.92 |
*price indicative
- RS stock no.:
- 202-5703
- Mfr. Part No.:
- NTH4L160N120SC1
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17.3A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 224mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 111W | |
| Forward Voltage Vf | 4V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Length | 18.62mm | |
| Height | 22.74mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17.3A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 224mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 111W | ||
Forward Voltage Vf 4V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Length 18.62mm | ||
Height 22.74mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 17.3 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.
160mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
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