Vishay EF N-Channel MOSFET, 36 A, 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Image representative of range

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS stock no.:
200-6830
Mfr. Part No.:
SIHH070N60EF-T1GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

PowerPAK 8 x 8

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

71mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

75nC

Maximum Power Dissipation Pd

202W

Maximum Operating Temperature

150°C

Length

8.1mm

Height

8.1mm

Standards/Approvals

No

Width

1.05mm

Automotive Standard

No

The Vishay SIHH070N60EF-T1GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy