onsemi NVMYS011N04C Type N-Channel MOSFET, 35 A, 40 V Enhancement, 4-Pin LFPAK NVMYS011N04CTWG
- RS stock no.:
- 195-2548
- Mfr. Part No.:
- NVMYS011N04CTWG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 50 units)*
R 528,60
(exc. VAT)
R 607,90
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 6,000 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 10.572 | R 528.60 |
| 100 - 450 | R 10.307 | R 515.35 |
| 500 - 950 | R 9.998 | R 499.90 |
| 1000 - 1450 | R 9.598 | R 479.90 |
| 1500 + | R 9.214 | R 460.70 |
*price indicative
- RS stock no.:
- 195-2548
- Mfr. Part No.:
- NVMYS011N04CTWG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMYS011N04C | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 28W | |
| Typical Gate Charge Qg @ Vgs | 7.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMYS011N04C | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 28W | ||
Typical Gate Charge Qg @ Vgs 7.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.25 mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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