N-Channel MOSFET, 138 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS2D4N04CTWG
- RS stock no.:
- 195-2511
- Mfr. Part No.:
- NTMYS2D4N04CTWG
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)**
R 324 76
(exc. VAT)
R 373 48
(inc. VAT)
6000 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 20 - 80 | R 16,238 | R 324,76 |
| 100 - 480 | R 15,832 | R 316,64 |
| 500 - 980 | R 15,357 | R 307,14 |
| 1000 - 1480 | R 14,742 | R 294,84 |
| 1500 + | R 14,153 | R 283,06 |
**price indicative
- RS stock no.:
- 195-2511
- Mfr. Part No.:
- NTMYS2D4N04CTWG
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 138 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | LFPAK, SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 2.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.25mm | |
| Height | 1.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 138 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type LFPAK, SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 32 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.25mm | ||
Height 1.15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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