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onsemi NTMYS2D4N04C Type N-Channel MOSFET, 138 A, 40 V Enhancement, 4-Pin LFPAK NTMYS2D4N04CTWG

RS stock no.:: 195-2511
Mfr. Part No.:: NTMYS2D4N04CTWG
Manufacturer:: onsemi

onsemi NTMYS2D4N04C Type N-Channel MOSFET, 138 A, 40 V Enhancement, 4-Pin LFPAK NTMYS2D4N04CTWG

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Bulk discount available

Subtotal (1 pack of 20 units)*

R 525,90

(exc. VAT)

R 604,78

(inc. VAT)

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Units	Per unit	Per Pack*
20 - 80	R 26.295	R 525.90
100 - 480	R 25.637	R 512.74
500 - 980	R 24.868	R 497.36
1000 - 1480	R 23.874	R 477.48
1500 +	R 22.919	R 458.38

*price indicative

RS stock no.:: 195-2511
Mfr. Part No.:: NTMYS2D4N04CTWG
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	138A
	Maximum Drain Source Voltage Vds	40V
	Package Type	LFPAK
	Series	NTMYS2D4N04C
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	2.3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Operating Temperature	175°C
	Height	1.15mm
	Standards/Approvals	No
	Width	4.25 mm
	Length	5mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 138A
	Maximum Drain Source Voltage Vds 40V
	Package Type LFPAK
	Series NTMYS2D4N04C
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 2.3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Operating Temperature 175°C
	Height 1.15mm
	Standards/Approvals No
	Width 4.25 mm
	Length 5mm
	Automotive Standard No

Datasheet NTMYS2D4N04CTWG

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

These Devices are Pb−Free

onsemi NTMYS2D4N04C Type N-Channel MOSFET, 138 A, 40 V Enhancement, 4-Pin LFPAK NTMYS2D4N04CTWG

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