Specification

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	40V
	Series	NVMYS010N04CL
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	17.6mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	7.3nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	28W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	5mm
	Height	1.15mm
	Width	4.25 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 40V
	Series NVMYS010N04CL
	Package Type LFPAK
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 17.6mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 7.3nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 28W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 5mm
	Height 1.15mm
	Width 4.25 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet NVMYS010N04CLTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS010N04CL Type N-Channel MOSFET, 38 A, 40 V Enhancement, 4-Pin LFPAK NVMYS010N04CLTWG

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