onsemi FCMT Type N-Channel MOSFET, 10 A, 650 V Enhancement, 4-Pin PQFN FCMT360N65S3

RS stock no.:: 195-2503
Mfr. Part No.:: FCMT360N65S3
Manufacturer:: onsemi

onsemi FCMT Type N-Channel MOSFET, 10 A, 650 V Enhancement, 4-Pin PQFN FCMT360N65S3

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Bulk discount available

Subtotal (1 pack of 20 units)*

R 771,12

(exc. VAT)

R 886,78

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 2,980 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
20 - 80	R 38.556	R 771.12
100 - 480	R 37.592	R 751.84
500 - 980	R 36.464	R 729.28
1000 - 1480	R 35.006	R 700.12
1500 +	R 33.606	R 672.12

*price indicative

RS stock no.:: 195-2503
Mfr. Part No.:: FCMT360N65S3
Manufacturer:: onsemi

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	650V
	Series	FCMT
	Package Type	PQFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	1.05mm
	Length	8mm
	Standards/Approvals	No
	Width	8 mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 650V
	Series FCMT
	Package Type PQFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 1.05mm
	Length 8mm
	Standards/Approvals No
	Width 8 mm
	Automotive Standard No

Datasheet FCMT360N65S3

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources.

onsemi FCMT Type N-Channel MOSFET, 10 A, 650 V Enhancement, 4-Pin PQFN FCMT360N65S3

FREE delivery for orders over R 1,500.00

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